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Radiation and thermal cycling effects on epc1001 gallium nitride power transistors
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Hammoud, Ahmad Scheick, Leif Z. Casey, Megan C. Lauenstein, Jean M. Patterson, Richard L. |
| Copyright Year | 2012 |
| Description | Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These include radiation, extreme temperatures, and thermal cycling, to name a few. Information pertaining to performance of electronic parts and systems under hostile environments is very scarce, especially for new devices. Such data is very critical so that proper design is implemented in order to ensure mission success and to mitigate risks associated with exposure of on-board systems to the operational environment. In this work, newly-developed enhancement-mode field effect transistors (FET) based on gallium nitride (GaN) technology were exposed to various particles of ionizing radiation and to long-term thermal cycling over a wide temperature range. Data obtained on control (un-irradiated) and irradiated samples of these power transistors are presented and the results are discussed. |
| File Size | 1502520 |
| Page Count | 16 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20130001606 |
| Archival Resource Key | ark:/13960/t9g49ps8v |
| Language | English |
| Publisher Date | 2012-11-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Radiation Effects Ionizing Radiation Field Effect Transistors Gallium Nitrides Irradiation Thermal Cycling Tests Risk Nasa Space Programs Exposure Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
