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Method of Controlling Interface Layer Thckness in High Delectric Constant Film Structures Field of Invention
| Content Provider | Semantic Scholar |
|---|---|
| Copyright Year | 2017 |
| Abstract | A method for controlling interface layer thickness in high dielectric constant (high-k) film structures found in semicon ductor devices. According to one embodiment, the method includes providing a monocrystalline silicon Substrate, grow ing a chemical oxide layer on the monocrystalline silicon Substrate in an aqueous bath, Vacuum annealing the chemical oxide layer, depositing a high-k film on the vacuum annealed chemical oxide layer, and optionally vacuum annealing the high-k film. According to another embodiment, the method includes depositing a high-k film on a chemical oxide layer, and vacuum annealing the high-k film. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/1a/6a/ac/aa7c8c5554f555/US20100035423A1.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |