Loading...
Please wait, while we are loading the content...
Similar Documents
HIGH DELECTRIC CONSTANT METAL OXDE GATE DELECTRICS BACKGROUND OF THE INVENTION 1. Field of the Invention
| Content Provider | Semantic Scholar |
|---|---|
| Copyright Year | 2017 |
| Abstract | U.S.C. 154(b) by 0 days. A method of forming a dielectric layer Suitable for use as the gate dielectric layer of a metal-oxide-Semiconductor field (21) Appl. No.: 09/212,773 effect transistor (MOSFET) includes oxidizing the surface of (22) Filed: Dec. 15, 1998 a silicon Substrate, forming a metal layer over the oxidized 9 Surface, and reacting the metal with the oxidized Surface to (51) Int. Cl. ................................................ H01L 29/76 form a Substantially intrinsic layer of Silicon Superjacent the (52) U.S. Cl. ....................... 257/411; 257/410; 438/287; Substrate, wherein at least a portion of the Silicon layer may 438/591 be an epitaxial Silicon layer, and a metal oxide layer Super (58) Field of Search ................................. 257/310, 405, jacent the Silicon layer. In a further aspect of the present 257/410, 411; 438/216, 287,591 invention, an integrated circuit includes a plurality of MOSFETs, wherein various ones of the plurality of transis (56) References Cited tors have metal oxide gate dielectric layers and Substantially |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/3c/88/7a/8b13a53d2c3a33/US6528856.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
