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Growth of ZnTe epilayers onr- andn-plane sapphire substrates
| Content Provider | Scilit |
|---|---|
| Author | Nakasu, Taizo Aiba, Takayuki Yamashita, Sotaro Hattori, Shota Kizu, Takeru Sun, Wei-Che Taguri, Kosuke Kazami, Fukino Kobayashi, Masakazu |
| Copyright Year | 2015 |
| Description | Journal: Japanese Journal of Applied Physics ZnTe epilayers were grown on r-plane () and n-plane () sapphire substrates by molecular beam epitaxy. The ZnTe domain distribution in the layer and the influence of the substrates’ c-plane location on the orientation of the epilayer were studied by means of X-ray diffraction pole figure measurements. Computer simulation was used to analyze the diffraction patterns. The (100)-plane ZnTe was formed on the r-plane substrate whereas two different {111}-plane mixed with the (511) domain were formed on n-plane substrate, respectively. The orientation of ZnTe layers on r-plane sapphire substrates could not change even by varying the buffer layer growth condition. From these results, it was revealed that the relationship of the sapphire c-plane and the (111) ZnTe strongly affected the orientation of the film. ZnTe layers grown on n-plane sapphire substrates, on the other hand, exhibited different relationships and (111) of ZnTe was not aligned to the sapphire c-plane. |
| Related Links | http://iopscience.iop.org/1347-4065/54/7/075501/pdf/1347-4065_54_7_075501.pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.7567/jjap.54.075501 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 7 |
| Volume Number | 54 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2015-06-05 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Plane Sapphire Substrates Grown On N Plane |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
