Loading...
Please wait, while we are loading the content...
Similar Documents
Effect of surface pretreatment ofr-plane sapphire substrates on the crystal quality ofa-plane AlN
| Content Provider | Scilit |
|---|---|
| Author | Lin, Chia-Hung Yasui, Daiki Tamaki, Shinya Miyake, Hideto Hiramatsu, Kazumasa |
| Copyright Year | 2016 |
| Description | Journal: Japanese Journal of Applied Physics Single-crystal a-plane AlN films were grown on r-plane sapphire substrates by hydride vapor phase epitaxy (HVPE). We performed the optimization of thermal cleaning and nitridation conditions for r-plane sapphire substrates, and investigated the effect of ammonia $(NH_{3}$) preflow on the crystallinity of a-plane AlN. An r-plane sapphire substrate with uniformly straight atomic steps was formed at 1000 °C, and $NH_{3}$ preflow was subsequently supplied. The growth mode of a-plane AlN was promoted to be three-dimensional (3D) growth by the nitridation of r-plane sapphire substrates, and sizes of 3D islands were modified by changing the $NH_{3}$ preflow time. The crystallinity of a-plane AlN films was improved by varying the $NH_{3}$ preflow time from 30 to 90 s. The optimum crystal quality of a-plane AlN films was obtained with $NH_{3}$ preflow for 30 s. |
| Related Links | http://iopscience.iop.org/article/10.7567/JJAP.55.05FA12/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.7567/jjap.55.05fa12 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 5S |
| Volume Number | 55 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2016-04-21 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Plane Sapphire Substrates |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
