Loading...
Please wait, while we are loading the content...
Similar Documents
Single-phase high-quality semipolar (10–13) AlN epilayers on m-plane (10–10) sapphire substrates
| Content Provider | Scilit |
|---|---|
| Author | Shen, Xu-Qiang Kojima, Kazutoshi Okumura, Hajime |
| Copyright Year | 2020 |
| Description | Journal: Applied Physics Express Single phase flat semipolar (10-13) AlN epilayers on m-plane (10-10) sapphire substrates grown by ammonia-free high temperature metalorganic vapor phase epitaxy are firstly demonstrated. It is found that twins and basal-plane stacking faults are undetectable by the X-ray diffraction and the cross-sectional characterizations. X-ray rocking curve show the full widths at half maximum of the (10-13) and the (0002) diffraction peaks from a ~2.3 μm-thick AlN film being as narrow as 322 arcsec and 373 arcsec, respectively, indicating a high structural quality. The semipolar AlN epilayers are expectable for the deep ultraviolet optoelectronic device applications with high performances. |
| Related Links | https://iopscience.iop.org/article/10.35848/1882-0786/ab7486/pdf |
| ISSN | 18820778 |
| e-ISSN | 18820786 |
| DOI | 10.35848/1882-0786/ab7486 |
| Journal | Applied Physics Express |
| Issue Number | 3 |
| Volume Number | 13 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2020-02-25 |
| Access Restriction | Open |
| Subject Keyword | Journal: Applied Physics Express Applied Physics Aln Epilayers |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
