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Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thicka-plane AlN films grown onr-plane sapphire substrates
| Content Provider | Scilit |
|---|---|
| Author | Lin, Chia-Hung Tamaki, Shinya Yamashita, Yasuhiro Miyake, Hideto Hiramatsu, Kazumasa |
| Copyright Year | 2016 |
| Description | Journal: Applied Physics Express 10-µm-thick a-plane AlN films containing a low-temperature AlN (LT-AlN) buffer layer and a high-temperature AlN (HT-AlN) film were prepared on r-plane sapphire substrates. The crystallinity of all the samples with different LT-AlN buffer layer thicknesses was improved after thermal annealing and HT-AlN growth, mainly owing to the elimination of domain boundaries and the concurrent suppression of facet formation. The optimum crystallinity of HT-AlN films was obtained with full widths at half maximum of the X-ray rocking curves of 660 arcsec for AlNAlN and 840 arcsec for (0002) using a 200-nm-thick LT-AlN buffer layer. |
| Related Links | http://iopscience.iop.org/article/10.7567/APEX.9.081001/pdf |
| ISSN | 18820778 |
| e-ISSN | 18820786 |
| DOI | 10.7567/apex.9.081001 |
| Journal | Applied Physics Express |
| Issue Number | 8 |
| Volume Number | 9 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2016-06-29 |
| Access Restriction | Open |
| Subject Keyword | Journal: Applied Physics Express |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
