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Defects reduction ina-plane AlGaN epi-layers grown onr-plane sapphire substrates by metal organic chemical vapor deposition
| Content Provider | Scilit |
|---|---|
| Author | Zhao, Jianguo Zhang, Xiong Dai, Qian Wang, Nan Wu, Zili Wang, Shuchang Cui, Yiping |
| Copyright Year | 2016 |
| Description | Journal: Applied Physics Express Nonpolar a-plane AlGaN epi-layers were grown on a semi-polar r-plane sapphire substrate with an innovative two-way pulsed-flows metal organic chemical vapor deposition growth technology. A root-mean-square value of 1.79 nm was achieved, and the relative light transmittance of the a-plane AlGaN epi-layer was enhanced by 36.9%. These results reveal that the innovative growth method is able to improve the surface morphology and reduce the defect density in nonpolar a-plane Al$ _{x}$ $Ga_{1–}$ $ _{x}$ N epi-layers, particularly those with an Al composition greater than 0.5, which are key materials for the fabrication of nonpolar AlGaN-based high light emission efficiency deep-ultraviolet light-emitting diodes. |
| Related Links | http://iopscience.iop.org/article/10.7567/APEX.10.011002/pdf |
| ISSN | 18820778 |
| e-ISSN | 18820786 |
| DOI | 10.7567/apex.10.011002 |
| Journal | Applied Physics Express |
| Issue Number | 1 |
| Volume Number | 10 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2016-12-08 |
| Access Restriction | Open |
| Subject Keyword | Journal: Applied Physics Express Applied Physics Epi Layers Algan Epi Plane Algan |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
