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Growth of non-polara-plane AlN onr-plane sapphire
| Content Provider | Scilit |
|---|---|
| Author | Jo, Masafumi Hirayama, Hideki |
| Copyright Year | 2015 |
| Description | Journal: Japanese Journal of Applied Physics Growth of non-polar AlN is crucial to the realization of polarization-free light-emitting diodes in deep UV range. The aim of this study was to investigate the growth condition for obtaining a flat a-plane AlN on r-plane sapphire. A thin AlN layer grown at lower temperature played an important role in protecting the sapphire surface. Both high temperature and low V/III ratio were necessary in terms of enhanced adatom diffusion, leading to the formation of a flat AlN buffer. |
| Related Links | http://iopscience.iop.org/article/10.7567/JJAP.55.05FA02/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.7567/jjap.55.05fa02 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 5S |
| Volume Number | 55 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2015-11-30 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |