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Highly Selective Dry Etching of GaN over AlGaN Using Inductively Coupled $Cl_{2}/N_{2}/O_{2}$Plasmas
| Content Provider | Scilit |
|---|---|
| Author | Han, Yanjun Xue, Song Guo, Wenping Luo, Yi Hao, Zhibiao Sun, Changzheng |
| Copyright Year | 2003 |
| Description | Journal: Japanese Journal of Applied Physics A systematic study of the selective etching of GaN over $Al_{0.28}Ga_{0.72}$N was performed using $Cl_{2}/N_{2}/O_{2}$ inductively coupled plasmas (ICP). Highly selective etching at high GaN etch rate is realized by optimizing the $O_{2}$ flow rate, the ICP power and the chamber pressure. Maximum etching selectivity of about 60:1 at a GaN etch rate of 320 nm/min has been demonstrated. X-ray photoelectron spectroscopy (XPS) analysis shows that the effective oxidation of AlGaN due to the addition of a small fraction of $O_{2}$ is crucial to obtain highly selective etching at high GaN etch rate. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.42.L1139/pdf |
| Ending Page | L1141 |
| Page Count | 3 |
| Starting Page | L1139 |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.42.l1139 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | Part 2, No |
| Volume Number | 42 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2003-10-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Nuclear Energy and Engineering Gan Etch Highly Selective Etch Rate |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
