NDLI: <formula formulatype=inline><tex Notation=TeX>$hbox{BCl}_{3}/hbox{Cl}_{2}$</tex></formula>-Based Inductively Coupled Plasma Etching of GaN/AlGaN Using Photoresist Mask

Content Provider	IEEE Xplore Digital Library
Author	Rawal, D.S. Malik, H.K. Agarwal, V.R. Kapoor, A.K. Sehgal, B.K. Muralidharan, R.
Copyright Year	1973
Abstract	Gallium nitride/aluminium gallium nitride (GaN/AlGaN) etching in BCl₃/Cl₂-based inductively coupled plasma (ICP) is investigated for high electron mobility transistor (HEMT) mesa etching using rarely preferred mask-photoresist. The critical issues related to photresist burning/deforming, resist removal, selectivity, mesa edge roughening, and nonuniform etching of GaN and AlGaN layers are discussed in detail using plasma of BCl₃/ Cl₂ gases. The effect of ICP process parameters like ICP power, RF power, pressure, and BCl₃/Cl₂ flow rate ratio on etch rate of GaN/AlGaN layers and mask is studied systematically for the optimization of a HEMT mesa etching process that results in smooth etched surface with sharp and highly anisotropic mesa edges. The photoresist mask selectivity is found to depend strongly on pressure and RF power, whereas the etched surface morphology changes significantly with the gas flow rate ratio and chamber pressure. The AlGaN etch rate and selectivity with respect to GaN is also characterized for different Al concentrations varying up to 33%. The etch process is finally applied to GaN/AlGaN HEMT mesa etching, where the mesa features with depth of ~ 1500 A° are etched successfully. The resultant process etch uniformity is found to be better than 5% over 2-in wafer.
Sponsorship	IEEE Nuclear and Plasma Sciences Society
Starting Page	2211
Ending Page	2220
Page Count	10
File Size	1683403
File Format	PDF
ISSN	00933813
Volume Number	40
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Etching Gallium nitride Iterative closest point algorithm Resists Aluminum gallium nitride Plasmas selectivity AlGaN etch rate etching GaN high electron mobility transistor (HEMT) inductively coupled plasma (ICP) mesa
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Condensed Matter Physics

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