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High-Rate Dry Etching of ZnO in $BCl_{3}/CH_{4}/H_{2}$Plasmas
| Content Provider | Scilit |
|---|---|
| Author | Bae, Jeong-Woon Jeong, Chang-Hyun Kim, Han-Ki Kim, Kyoung-Kook Cho, Nam-Gil Seong, Tae-Yeon Park, Seong-Ju Adesida, Ilesanmi Yeom, Geun-Young |
| Copyright Year | 2003 |
| Description | Journal: Japanese Journal of Applied Physics High-rate dry etching characteristics of aluminum-doped zinc oxide (AZO) have been investigated in inductively coupled plasma (ICP) using $BCl_{3}/CH_{4}/H_{2}$ plasma chemistry. Etch rates were measured as a function of $BCl_{3}$ flow rate in $BCl_{3}/CH_{4}/H_{2}$ mixture and dc-bias voltage. Measurement of etch rate, and etched sidewall profile were performed using a stylus profilometer and scanning electron microscopy, respectively. The highest AZO etch rate about 310 nm/min, could be obtained near 80% $BCl_{3}$ and at dc-bias voltage of -350 V. |
| Related Links | http://pdfs.semanticscholar.org/acd6/863daac0f37ddfc0d1eb4a333f9798d010ba.pdf http://iopscience.iop.org/article/10.1143/JJAP.42.L535/pdf |
| Ending Page | L537 |
| Page Count | 3 |
| Starting Page | L535 |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.42.l535 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | Part 2, No |
| Volume Number | 42 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2003-05-15 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Nuclear Energy and Engineering Scanning Electron Microscopy Zinc Oxide Inductive Coupled Plasma Bias Voltage Inductively Coupled Plasma Flow Rate |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
