NDLI: Etching Characteristics of ZnO and Al-Doped ZnO in Inductively Coupled $Cl_{2}/CH_{4}/H_{2}$/Ar and $BCl_{3}/CH_{4}/H

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Etching Characteristics of ZnO and Al-Doped ZnO in Inductively Coupled $Cl_{2}/CH_{4}/H_{2}$/Ar and $BCl_{3}/CH_{4}/H_{2}$/Ar Plasmas

Content Provider	Scilit
Author	Lee, Hack Joo Kwon, Bong Soo Kim, Hyun Woo Kim, Seon Il Yoo, Dong-Geun Boo, Jin-Hyo Lee, Nae-Eung
Copyright Year	2008
Description	Journal: Japanese Journal of Applied Physics ZnO and Al-doped ZnO (AZO) were etched in $Cl_{2}/CH_{4}/H_{2}$/Ar $(Cl_{2}$-based) and $BCl_{3}/CH_{4}/H_{2}$/Ar $(BCl_{3}$-based), inductively coupled plasmas (ICPs) and their etching characteristics were compared by varying the $Cl_{2}/(Cl_{2}+CH_{4}$) and $BCl_{3}/(BCl_{3}+CH_{4}$) flow ratios, top electrode power and dc self-bias voltage $(V_{dc}$). The etch rates of both ZnO and AZO layers were higher in the $Cl_{2}$-based chemistry than in the $BCl_{3}$-based chemistry. The AZO and ZnO etch rates were increased and decreased, respectively, with increasing $Cl_{2}$ or $BCl_{3}$ flow ratio. Optical emission measurements of the radical species in the plasma and surface binding states by optical emission spectroscopy (OES) and X-ray photoelectron spectroscopy (XPS), respectively, indicated that, with increasing $Cl_{2}$ or $BCl_{3}$ flow ratio; the effective removal of Al in the AZO enhanced the AZO etch rate, whereas the reduced removal of Zn by the $Zn(CH_{x})_{y}$ products reduced the ZnO etch rate.
Related Links	http://pdfs.semanticscholar.org/5c2b/a72c78aa0564739fbd68230b9c7d349119d7.pdf http://iopscience.iop.org/article/10.1143/JJAP.47.6960/pdf
Ending Page	6964
Page Count	5
Starting Page	6960
ISSN	00214922
e-ISSN	13474065
DOI	10.1143/jjap.47.6960
Journal	Japanese Journal of Applied Physics
Issue Number	8
Volume Number	47
Language	English
Publisher	IOP Publishing
Publisher Date	2008-08-22
Access Restriction	Open
Subject Keyword	Journal: Japanese Journal of Applied Physics Nuclear Energy and Engineering X Ray Photoelectron Spectroscopy Inductive Coupled Plasma Plasma Etching Inductively Coupled Plasma
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy Engineering

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