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Comparative study on interface and bulk charges in AlGaN/GaN metal–insulator–semiconductor heterostructures with $Al_{2}O_{3}$, AlN, and $Al_{2}O_{3}$/AlN laminated dielectrics
| Content Provider | Scilit |
|---|---|
| Author | Zhu, Jie-Jie Ma, Xiao-Hua Chen, Wei-Wei Hou, Bin Xie, Yong Hao, Yue |
| Copyright Year | 2015 |
| Description | Journal: Japanese Journal of Applied Physics In this paper, the interface and bulk charges in AlGaN/GaN metal–insulator–semiconductor (MIS) heterostructures with AlN, $Al_{2}O_{3}$, and $Al_{2}O_{3}$/AlN laminated dielectrics were studied. In situ plasma pretreatment resulted negligible interface trap states and voltage hysteresis. The fixed charge density at $Al_{2}O_{3}$/AlN (or $Al_{2}O_{3}$/barrier) interface was estimated to be 1.66 × $10^{13}$ $cm^{−2}$ by using flat-band voltage shift, and the oxide bulk charge concentration was 2.86 × $10^{17}$ $cm^{−3}$. The interface charge density at other interfaces were at the order of $10^{11}$ $cm^{−2}$. Simulation results using the above charge density/concentration indicated that $Al_{2}O_{3}$/AlN interface fixed charges dominated the dielectric-related voltage shift in AlGaN/GaN MIS heterostructures, which caused a large voltage shift of −3 V with 10 nm $Al_{2}O_{3}$ thickness, while the flat-band voltage variety resulting from other types of charges was within 0.1 V. |
| Related Links | http://iopscience.iop.org/article/10.7567/JJAP.55.05FH01/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.7567/jjap.55.05fh01 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 5S |
| Volume Number | 55 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2015-11-30 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
