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Threshold Voltage Instability in Al$_{2}$O$_{3}$/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors
| Content Provider | Scilit |
|---|---|
| Author | Huang, Sen Yang, Shu Roberts, John Chen, Kevin J. |
| Copyright Year | 2011 |
| Description | Journal: Japanese Journal of Applied Physics The threshold voltage $(V_{th}$) instability in GaN-based metal–insulator–semiconductor high-electron mobility transistors (MIS-HEMTs) with 15-nm atomic-layer-deposited (ALD) $Al_{2}O_{3}$ as gate dielectrics is systematically investigated by dc current–voltage (I–V), high-frequency capacitance–voltage (C–V) (HFCV), and quasi-static C–V (QSCV) characterizations. Both $Al_{2}O_{3}$/GaN/AlGaN/GaN MIS diode and GaN/AlGaN/GaN Schottky diode only exhibit tiny threshold-voltage hysteresis $(ΔV_{th}$) (<10 mV) in double-mode (up and down sweep) HFCV characteristics as the maximum forward bias $(V_{Fmax}$) during the sweep is set to 0 V, while an apparent $ΔV_{th}$ (as large as 0.9 V) emerges as $V_{Fmax}$ is increased to +5 V for the MIS diode. The stability of $V_{th}$ in the corresponding MIS-HEMTs is thus studied by increasing the maximum $V_{GS}$ $(V_{GSmax}$) in the measurement of transfer characteristics. Significant positive $V_{th}$ shift occurred once the $V_{GSmax}$ exceeds +1 V, while such $V_{th}$-instability is still absent in Schottky-gate AlGaN/GaN HEMTs. It is suggested that the acceptor-like deep states at $Al_{2}O_{3}$/GaN interface account for the $V_{th}$-instability in $Al_{2}O_{3}$/GaN/AlGaN/GaN MIS-HEMTs. As the filling and emission processes of these interface states are slow, they are successfully captured by low-frequency QSCV techniques. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.50.110202/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.50.110202 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 11R |
| Volume Number | 50 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2011-10-25 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Public, Environmental and Occupational Health |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
