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AlGaN/GaN metal–insulator–semiconductor high-electron mobility transistors with high on/off current ratio of over 5 × $10^{10}$achieved by ozone pretreatment and using ozone oxidant for $Al_{2}O_{3}$gate insulator
| Content Provider | Scilit |
|---|---|
| Author | Tokuda, Hirokuni Asubar, Joel T. Kuzuhara, Masaaki |
| Copyright Year | 2016 |
| Description | Journal: Japanese Journal of Applied Physics This letter describes DC characteristics of AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) with $Al_{2}O_{3}$ deposited by atomic layer deposition (ALD) as gate dielectric. Comparison was made for the samples deposited using ozone $(O_{3}$) or water as oxidant. The effect of pretreatment, where $O_{3}$ was solely supplied prior to depositing $Al_{2}O_{3}$, was also investigated. The MIS-HEMT with $O_{3}$ pretreatment and $Al_{2}O_{3}$ gate dielectric deposited using $O_{3}$ as the oxidant exhibited the most desirable characteristics with an excellent high on/off current ratio of 7.1 × $10^{10}$, and a low sub-threshold swing (SS) of 73 mV/dec. |
| Related Links | http://iopscience.iop.org/article/10.7567/JJAP.55.120305/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.7567/jjap.55.120305 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 12 |
| Volume Number | 55 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2016-11-11 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Peripheral Vascular Disease |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
