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Device Characteristics of AlGaN/GaN MIS-HFET Using $Al_{2}O_{3}-HfO_{2}$Laminated High-kDielectric
| Content Provider | Scilit |
|---|---|
| Author | Park, Ki-Yeol Cho, Hyun-Ick Choi, Hyun-Chul Bae, Young-Ho Lee, Chun-Soo Lee, Jong-Lam Lee, Jung-Hee |
| Copyright Year | 2004 |
| Description | Journal: Japanese Journal of Applied Physics This is the first report on an AlGaN/GaN metal-insulator-semiconductor-heterostructure field-effect transistors (MIS-HFET) with an $Al_{2}O_{3}–HfO_{2}$ laminated high-k dielectric, deposited by plasma-enhanced atomic layer deposition (PEALD). Based on capacitance-voltage measurements, the dielectric constant of the deposited $Al_{2}O_{3}–HfO_{2}$ laminated layer was estimated to be 15. The fabricated MIS-HFET with a gate length of 1.2 µm exhibited a maximum drain current of 500 mA/mm and a maximum transconductance of 125 mS/mm. The gate leakage current was at least 4 orders of magnitude lower than that of the reference HFET. The pulsed current-voltage curve revealed that the $Al_{2}O_{3}–HfO_{2}$ laminated dielectric effectively passivated the surface of the device. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.43.L1433/pdf |
| Ending Page | L1435 |
| Page Count | 3 |
| Starting Page | L1433 |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.43.l1433 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | No. 11A |
| Volume Number | 43 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2004-10-15 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Quantum Science and Technology Telecommunications |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
