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Hydrogen effect on $Pt/Al_{2}O_{3}$/GaN metal-oxide-semiconductor capacitors
| Content Provider | Scilit |
|---|---|
| Author | Irokawa, Yoshihiro Nabatame, Toshihide Ohi, Akihiko Ikeda, Naoki Sakata, Osami Koide, Yasuo |
| Copyright Year | 2019 |
| Description | Journal: Japanese Journal of Applied Physics Effect of hydrogen on Pt/Al2O3/GaN metal-oxide-semiconductor (MOS) capacitors was investigated by capacitance-voltage (C-V) measurements. As a result, it was confirmed that hydrogen exposure shifted the C-V curves towards negative bias direction, indicating that hydrogen was incorporated into Al2O3 as a positive charge. Dry air exposure shifted the C-V curves back towards positive bias direction more quickly than nitrogen did, which suggests a catalytic function of Pt. Moreover, applying a negative bias to Pt resulted in faster shifts of the C-V curves back towards positive bias direction. These results may suggest that hydrogen plays a critical role in post-metallization annealing (PMA). |
| Related Links | https://iopscience.iop.org/article/10.7567/1347-4065/ab476a/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.7567/1347-4065/ab476a |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 10 |
| Volume Number | 58 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2019-10-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Metallurgy and Metallurgical Engineering |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
