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The structure and energy of reconstructed {211} twins in silicon
| Content Provider | Scilit |
|---|---|
| Author | Pond, R. C. Bacon, D. J. Bastaweesy, A. M. |
| Copyright Year | 2020 |
| Description | The structure and energy of {211} twins in silicon have been investigated using computer simulation. The simulation allows relaxation of atomic positions, and the contributions to the interfacial energy arising from both bond stretching and deviations of interbond angles from that in tetrahedral coordination are calculated. Two twin boundary structures were found having low interfacial energy; both configurations contain no dangling bonds. One structure exhibits mirror symmetry across the interfacial plane, whereas in the other structure the two crystals are rigidly translated to a relative position in excellent agreement with recent experimental measurements. Book Name: Microscopy of Semiconducting Materials, 1983 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-01873-7&isbn=9781003069614&doi=10.1201/9781003069614-39&format=pdf |
| Ending Page | 257 |
| Page Count | 5 |
| Starting Page | 253 |
| DOI | 10.1201/9781003069614-39 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2020-11-25 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1983 Condensed Matter Physics Structure Silicon Experimental Coordination Agreement Configurations Mirror Crystals |
| Content Type | Text |
| Resource Type | Chapter |
