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Defects induced by annealing or irradiation in CZ silicon or germanium
| Content Provider | Scilit |
|---|---|
| Author | Desseaux-Thibault, J. Bourret, A. Penisson, J. M. |
| Copyright Year | 2020 |
| Description | A comparison is made between defects obtained by annealing and irradiation. The defects are observed by HREM. Irradiation induced line defects obtained with 1 MeV electrons are easy to obtain in germanium. They look similar to rod-like defects in Si produced after a long-anneal at 650°C. Black dots obtained in both treatments are compared with the defects produced during ion bombardment in Si. Book Name: Microscopy of Semiconducting Materials, 1983 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-01873-7&isbn=9781003069614&doi=10.1201/9781003069614-11&format=pdf |
| Ending Page | 76 |
| Page Count | 6 |
| Starting Page | 71 |
| DOI | 10.1201/9781003069614-11 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2020-11-25 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1983 Nuclear Energy and Engineering |
| Content Type | Text |
| Resource Type | Chapter |