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TEM studies of small geometry silicon MOSFETs
| Content Provider | Scilit |
|---|---|
| Author | Roberts, M. C. Booker, G. R. Davidson, S. M. Yallup, K. J. |
| Copyright Year | 2020 |
| Description | TEM and SEM/EBIC examinations have been performed on NMOS polysilicon gate transistors to determine both the geometry of the devices and the location and nature of any defects. TEM etched cross sections have been used to delineate arsenic doped $n^{+}$-p source/drain junctions for a range of heat treatment times at 950°C to an accuracy of ±10 run. The experimental values of junction depth and lateral spreading obtained have been compared with a two-dimensional dopant diffusion model. The level of agreement achieved is encouraging. Book Name: Microscopy of Semiconducting Materials, 1983 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-01873-7&isbn=9781003069614&doi=10.1201/9781003069614-70&format=pdf |
| Ending Page | 472 |
| Page Count | 6 |
| Starting Page | 467 |
| DOI | 10.1201/9781003069614-70 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2020-11-25 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1983 Condensed Matter Physics Treatment Model Tem Depth Experimental Geometry Arsenic Defects Agreement Sem/ebic |
| Content Type | Text |
| Resource Type | Chapter |
