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A theoretical interpretation of dislocation glide in silicon
| Content Provider | Scilit |
|---|---|
| Author | Heggie, M. Jones, R. |
| Copyright Year | 2020 |
| Description | It is likely that glide partials, and hence kinks upon them, are reconstructed, but soliton-like excitations of reconstruction (anti-phase defects) give rise to dangling bonds. Hirsch's theory of doping dependent dislocation velocity in silicon implies that reconstructed kinks are strongly bound to solitons, whereas it will be shown that an equally good description of dislocation behaviour arises by assuming that their binding energy is small. Theoretical estimates of formation energies of the soliton in different charge states point to the instability of the neutral, paramagnetic state. This explains the lack of e.p.r. activity in the presence of enhanced recombination at dislocations. Invoking the presence of vacancy-soliton complexes in low-temperature-deformed silicon leads to an explanation of some of the features of the e.p.r. spectrum of this material – particularly the annealing behaviour, which occurs by emission of vacancies from the complexes. Book Name: Microscopy of Semiconducting Materials, 1983 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-01873-7&isbn=9781003069614&doi=10.1201/9781003069614-7&format=pdf |
| Ending Page | 54 |
| Page Count | 10 |
| Starting Page | 45 |
| DOI | 10.1201/9781003069614-7 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2020-11-25 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1983 Condensed Matter Physics Silicon Dislocation Theoretical Vacancies Complexes Kinks Glide Soliton Reconstructed E.p.r |
| Content Type | Text |
| Resource Type | Chapter |
