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Heatpulse annealing of ion-implanted silicon: structural characterization by transmission electron microscopy
| Content Provider | Scilit |
|---|---|
| Author | Sadana, D. K. Shatas, S. C. Gat, A. |
| Copyright Year | 2020 |
| Description | A detailed structural investigation of Heatpulse rapid thermal annealed ion-implanted Si was carried out using TEM. Defect-free material was obtained after an 1100°C/10 sec. anneal for 80 KeV $2×10^{15} ^{75}$As implanted Si, while dislocation loops were still present after lower temperature anneals. When compared with arsenic, 35 KeV $11_{B}$ implanted Si in the dose range $5×10^{14}$ exhibited markedly different behavior under the same annealing conditions, in that residual defects in the form of line dislocations, loops, and rods were observed. Comparison with 1000°C/30 min. furnace annealed samples showed differences in defect structures and impurity redistribution behavior as revealed by SIMS measurements. A model explaining the annealing behavior of implanted layers in silicon under rapid annealing conditions is proposed. Book Name: Microscopy of Semiconducting Materials, 1983 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-01873-7&isbn=9781003069614&doi=10.1201/9781003069614-22&format=pdf |
| Ending Page | 148 |
| Page Count | 6 |
| Starting Page | 143 |
| DOI | 10.1201/9781003069614-22 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2020-11-25 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1983 Microscopic Research Nuclear Energy and Engineering |
| Content Type | Text |
| Resource Type | Chapter |
