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| Content Provider | IET Digital Library |
|---|---|
| Author | Khan, Imtiaj Morshed, Ovishek Mominuzzaman, Sharif Mohammad |
| Abstract | Carbon nanotube (CNT) is one of the most significant materials for the development of faster and improved performance of nanoscaled transistors. This work aims at analysing a trade-off between device performance and device size of CNT-based transistor. Acoustic and optical phonon (OP) scattering along with the elastic scattering lead to the non-ballistic performances of those transistors. The main focus of this work is mainly on finding an optimum diameter to obtain the highest degree of ballisticity (DoB) from both single-walled (SWCNT-FET) and double-walled CNT field-effect transistors (DWCNT-FET). At first, an n-type SWCNT-FET has been considered and the diameter dependence on DoB has been simulated. The effects of drain voltage, gate voltage and channel length have been investigated for such characteristics followed by a comparison with DWCNT-FET structure. First of all, it has been found that DoB along with the optimum diameter increases with the increase of (V DS–V GS). The increase of channel length, however, degrades the ballistic performance demanding a higher diameter to reach the optimum point. Finally, it can be concluded that optimum diameter for DWCNT-FET reaches earlier than SWCNT-FET but at lower DoB. |
| Starting Page | 590 |
| Ending Page | 594 |
| Page Count | 5 |
| Volume Number | 14 |
| e-ISSN | 17500443 |
| Issue Number | Issue 6, May (2019) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/14/6 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2018.5604 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2019-05-29 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Acoustic Scattering Ballistic Performance Ballistics Carbon Nanotube Carbon Nanotube Field Effect Transistors Channel Length CNT-based Transistor CNT-FETs Degree of Ballisticity Device Performance Device Size Diameter Dependence Diameter Optimisation DoB Double-walled CNT Field-effect Transistors Drain Voltage Effect DWCNT-FET DWCNT-FET Structure Elastic Scattering Field Effect Device Fullerene Gate Voltage Multi-wall Carbon Nanotube N-type SWCNT-FET Nanoelectronics Nanoscaled Transistors Nanotube And Related Device Nonballistic Performances Optical Phonon Scattering Single-wall Carbon Nanotube Single-walled CNT Field-effect Transistors |
| Content Type | Text |
| Resource Type | Article |
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