NDLI: Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal–insulator–semiconductor field-effect transistors and high-electron-mobility transistors

Content Provider	IET Digital Library
Author	Longobardi, Giorgia Udrea, Florin Sque, Stephen Croon, Jeroen Hurkx, Fred Šonský, Jan
Abstract	This study presents a detailed analysis of the Plasma-enhanced chemical vapour deposition (PECVD) silicon-nitride/semiconductor interface of gallium nitride (GaN) transistors through the study of the transfer characteristics of a large-gate-area metal-insulator-semiconductor field-effect transistor (MISFET). Id –Vg measurements were performed on several MISFETs across the wafer and for all of them the authors observed strong hysteresis between forward and reverse sweeps and a double kink. These features indicate the presence of traps beneath the gate electrode. Neither the hysteresis nor the kinks were seen in the measured high-electron-mobility transistor (HEMT) characteristics suggesting that the passivation/semiconductor interface is electrically responsible for them. The transfer characteristics of the MISFET have been reproduced using a technology computer-aided design (TCAD) deck that includes fixed charges and donor traps at the passivation/semiconductor interface. The impact of these charges on the Id –Vg and their influence on the formation of a surface-inversion layer is here explained through extensive TCAD simulations. This study has also been extended to different temperatures between 35 and 75°C to investigate the change in the transfer characteristics at elevated temperatures. It is shown that the hysteresis observed between forward and reverse sweeps and the transconductance decrease significantly with increasing temperature.
Starting Page	2322
Ending Page	2328
Page Count	7
ISSN	17554535
Volume Number	8
e-ISSN	17554543
Issue Number	Issue 12, Dec (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/8/12
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2015.0009
Journal	IET Power Electronics
Publisher Date	2015-12-01
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Aluminium Compound Design And Testing Donor Traps Double Kink Equivalent Circuit Field Effect Device Fixed Charges Forward Sweeps Gallium Compound GaN−AlGaN−GaN Gate Electrode HEMT High Electron Mobility Transistors High-electron-mobility Transistors High-voltage Transistors Insulated Gate Field Effect Transistors Metal–insulator–semiconductor Field-effect Transistors MISFET Passivation Reverse Sweeps Semiconductor Device Modelling Semiconductor Interface Semiconductor Technology Surface Charges Surface Topography Measurement Surface-inversion Layer TCAD Simulations Technology CAD (electronics) Transfer Characteristic
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO₃ Ferroelectric Insulator on Gate-Recessed Structure

16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator

High-breakdown voltage and low on-resistance AlGaN/GaN on Si MOS-HEMTs employing an extended TaN gate on HfO2 gate insulator

High-voltage RESURF AlGaN/GaN high electron mobility transistor with back electrode

200°C normally off AlGaN/GaN MISFET with 321 mA/mm drain current density and 1055 V breakdown voltage

High breakdown voltage AlGaN/GaN HEMTs with a dipole layer for microwave power applications

Enhancement-mode AlGaN/GaN HEMTs with optimised electric field using a partial GaN cap layer

Random-telegraph-signal noise in AlGaN/GaN MIS-HEMT on silicon

Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors

Similar Documents

GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO3 Ferroelectric Insulator on Gate-Recessed Structure

16.8 A/600 V AlGaN/GaN MIS-HEMTs employing LPCVD-Si3N4 as gate insulator

High-breakdown voltage and low on-resistance AlGaN/GaN on Si MOS-HEMTs employing an extended TaN gate on HfO2 gate insulator

High-voltage RESURF AlGaN/GaN high electron mobility transistor with back electrode

200°C normally off AlGaN/GaN MISFET with 321 mA/mm drain current density and 1055 V breakdown voltage

High breakdown voltage AlGaN/GaN HEMTs with a dipole layer for microwave power applications

Enhancement-mode AlGaN/GaN HEMTs with optimised electric field using a partial GaN cap layer

Random-telegraph-signal noise in AlGaN/GaN MIS-HEMT on silicon

Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors

GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO₃ Ferroelectric Insulator on Gate-Recessed Structure