NDLI: Electronic enhancement effect of doped ferromagnetic material in biomolecular heterojunction switch

Content Provider	IET Digital Library
Author	Dey, Debarati Roy, Pradipta De, Debashis
Abstract	Density functional theory conjugated with non-equilibrium Green's function-based first principle approach is used to determine the ferromagnetic-doping effect in the current–voltage characteristics for the heterojunction biomolecular analytical structure. The quantum-mechanical transport phenomenon and multiple switching activities associated with sequential negative differential resistance properties have been observed for this adenine-thymine chain. The authors investigate the quantum-transport properties of conventional doping effect for ferromagnetic atoms in this bimolecular chain. The results show an electronic enhancement effect in quantum-ballistic conductivity for this chain along with sequential switching property. Among these ferromagnetic metals, Nickel shows significant transmission spectrum, sharp and prominent highest occupied molecular orbital (MO) and lowest un-occupied MO peak along with maximum quantum-ballistic current at room temperature. It is observed from the device density of states that large numbers of conducting channels are available for Nickel doping. This ensures high quantum-transmission current flow within the central molecular region for these ferromagnetic dopants. Compared to Iron and Cobalt, the current has been enhanced up to 4.05 times for Nickel dopant. High doping concentration (13.3%) has been introduced for this ab-initio model. It has found that the number of total switching process is increased during ferromagnetic doping mainly for Cobalt and Nickel dopants.
Starting Page	79
Ending Page	90
Page Count	12
ISSN	1751858X
Volume Number	13
e-ISSN	17518598
Issue Number	Issue 1, Jan (2019)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/13/1
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2018.5244
Journal	IET Circuits, Devices & Systems
Publisher Date	2018-07-13
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Ab Initio Calculations Ab Initio Calculations (condensed Matter Electronic Structure) Adenine-thymine Heterojunction Chain Ballistic Transport Biomolecular Chain Biomolecular Heterojunction Switch Cobalt Cobalt Dopants Conducting Channel Conventional Doping Effect Current–voltage Characteristics Density Functional Theory Density Functional Theory, Local Density Approximation (condensed Matter Electronic Structure) Design And Testing Device Density of States Distribution DNA Doped Ferromagnetic Material Doping And Implantation of Impurities Doping Profiles Electronic Density of State Electronic Enhancement Effect Equivalent Circuit Ferromagnetic Atoms Ferromagnetic Dopants Ferromagnetic Doping Ferromagnetic Material Ferromagnetic Metals Ferromagnetic-doping Effect General Mathematical Technique in Electronic Structure Calculations (condensed Matter) Gradients Green's Function Heterojunction Bimolecular Chain Heterojunction Biomolecular Analytical Structure High Doping Concentration High Field Transport And Nonlinear Effect (SemiConductor/Insulator) High Quantum-transmission Current Flow Highest Occupied Molecular Orbital Impurity Concentration Iron Iron Doping Lowest Unoccupied MO Peak Maximum Quantum-ballistic Current Multiple Switching Activities Negative Resistance Nickel Nickel Doping Nonequilibrium Green's Function-based First Principle Approach Quantum-ballistic Conductivity Quantum-mechanical Transport Phenomenon Quantum-transport Property Semiconductor Device Model Semiconductor Device Modelling Sequential Negative Differential Resistance Property Sequential Switching Property Temperature 293 K to 298 K Total Switching Process
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

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