NDLI: Optically triggered global shutter image sensor using single-photon avalanche diodes

Content Provider	IET Digital Library
Author	Karami, Mohammad Azim Ansarian, Misagh
Abstract	A novel optically triggered global shutter image sensor using single photon avalanche diodes (SPAD) is proposed. An optical signal with a switching frequency of 100 MHz illuminates SPADs and acts as both a shutter and reset signal source by means of free space optics. Each image sensor pixel contains a front side illuminated SPAD, while a pinned photodiode is used to collect the scene's light from the chip back side to increase the pixel fill factor. The pixel is designed and post layout simulated in 90 nm complementary metal oxide semiconductor technology. Moreover, the jitter performance of 76.2 ps (excluding SPAD and light source jitter) is achieved. The image sensor pixel pitch is 90 µm with 2.27 mW power consumption per pixel with a fill factor of above 90%. The image sensor pixel can take 64 different frames at the rate of 50 Mfps and store until the global readout phase.
Starting Page	7
Ending Page	11
Page Count	5
ISSN	1751858X
Volume Number	13
e-ISSN	17518598
Issue Number	Issue 1, Jan (2019)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/13/1
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2018.0017
Journal	IET Circuits, Devices & Systems
Publisher Date	2018-05-18
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Avalanche Photodiode CMOS Integrated Circuit Complementary Metal Oxide Semiconductor Technology Converto Free Space Optics Frequency 100 MHz Front Side Illuminated SPAD Image Detector Image Sensor Pixel Image Sonsor Integrated Optics Intensifiers Light Source Jitter Optical Element Optical Signal Optical Sonsor Optically Triggered Global Shutter Image Sensor Photoelectric Device Pinned Photodiode Pixel Fill Factor Post Layout Power 2.27 MW Reset Signal Source Scene Light Collection Single-photon Avalanche Diode Size 90 Nm Switching Circuit Time 76.2 Ps
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

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2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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