NDLI: Analytical modelling and simulation of drain doping engineered splitted drain structured TFET and its improved performance in subduing ambipolar effect

Content Provider	IET Digital Library
Author	Bhattacharjee, Disha Goswami, Bijoy Dash, Dinesh Kumar Bhattacharya, Ayan Sarkar, Subir Kumar
Abstract	The study presents an analytical model for the potential distribution of a drain doping engineered 2D tunnelling field effect transistor (TFET) with splitted drain structure. Hence, tunnelling drain current is derived using this potential distribution. Further, the study analyses the influence of drain doping engineering on all characteristics and parameters of a TFET model. Splitted drain structure exhibits major reduction in ambipolar conduction due to increase of the tunnelling width at the channel-drain junction. Simulation of four different structures of the device consisting of splitted drain region with relative location and doping concentration is executed. The structures are named according to the relative position of the drain: splitted-drain single-gate TFET (SD-SG TFET: total drain is splitted), top-splitted-drain single-gate TFET (TSD-SG TFET: splitted-drain in upper location), Mesial-splitted-drain single-gate TFET (MSD-SG TFET: splitted-drain in middle location), and basal-splitted-drain single-gate TFET (BSD-SG TFET: splitted-drain in bottom location). All the fundamental device characteristics and parameters are analysed for all the four structures, and their merits and drawback are recorded for optimal valuation and detection of better structure. All the proposed structures show improved performance with suppressed gate leakage and ambipolarity than conventional planar TFET. All the simulations are done in Silvaco, Atlas.
Starting Page	888
Ending Page	895
Page Count	8
ISSN	1751858X
Volume Number	13
e-ISSN	17518598
Issue Number	Issue 6, Sep (2019)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/13/6
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2018.5261
Journal	IET Circuits, Devices & Systems
Publisher Date	2019-05-13
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	2D Tunnelling Field Effect Transistor Ambipolar Conduction Ambipolar Effect Atlas Basal-splitted-drain Single-gate TFET BSD-SG TFET Channel-drain Junction Design And Testing Doping Concentration Doping Profiles Drain Doping Engineering Equivalent Circuit Field Effect Device Fundamental Device Characteristic Mesial-splitted-drain Single-gate TFET MSD-SG TFET SD-SG TFET Semiconductor Device Model Semiconductor Device Modelling Semiconductor Doping Silvaco Splitted Drain Region Splitted Drain Structure Suppressed Gate Leakage TFET Model Top-splitted-drain Single-gate TFET TSD-SG TFET Tunnel Field-effect Transistors Tunnelling Drain Current Tunnelling Width
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

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