NDLI: Compact and high-linearity 77 GHz CMOS receiver front-end for automotive radar

Content Provider	IET Digital Library
Author	Pan, Dongfang Daun, Zongming Sun, Liguo Gui, Ping
Abstract	This study presents a 77 GHz receiver (Rx) front-end implemented in TSMC 65 nm complementary metal oxide semiconductor (CMOS) process for the application of automotive radar. This Rx front achieves high linearity, low noise figure (NF) and low local oscillator (LO) power level in compact silicon area. The Rx front-end includes a low-noise amplifier with transformer-feedback technique to improve the bandwidth and linearity, a balun, and a double-balanced mixer with transformer coupling. These techniques allow for compact design and high-linearity. The measurement results have demonstrated a conversion gain of 6.1–9.1 dB over the frequency range of 68.9–80.2 GHz, an NF of 7.8–9.1 dB over the range of 76–81 GHz, and LO-radio frequency isolation of 55–60 dB over 60–90 GHz. The input −1 dB compression point P 1 dB is measured to be −16.8 dBm at 79 GHz. The core silicon area of the Rx front-end is 0.165 mm2 excluding pads. The Rx front-end consumes 18 mW from a supply of 1.0 V.
Starting Page	1203
Ending Page	1208
Page Count	6
ISSN	1751858X
Volume Number	13
e-ISSN	17518598
Issue Number	Issue 8, Nov (2019)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/13/8
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2018.5601
Journal	IET Circuits, Devices & Systems
Publisher Date	2019-08-07
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Amplifiers Automobile Electronics Automotive Radar CMOS Integrated Circuit CMOS Receiver Front-end Compact Silicon Area Core Silicon Area Demodulator Discriminators And Mixers Double-balanced Mixer Elemental Semiconductor Field Effect MIMIC Frequency 68.9 GHz to 80.2 GHz Frequency 76.0 GHz to 81.0 GHz Gain 6.1 DB to 9.1 DB LO-radio Frequency Isolation Low Local Oscillator Power Level Low Noise Amplifier Low-noise Amplifier Microwave IC Millimetre Wave Amplifiers Millimetre Wave Mixers Millimetre Wave Receiver Modulator Noise Figure 7.8 DB to 9.1 DB Power 18.0 MW Radar Equipment Road Vehicle Radar Rx Front-end Silicon Size 0.165 Mm Size 65 Nm System And Application Transformer Coupling Transformer-feedback Technique TSMC Complementary Metal Oxide Semiconductor Process Voltage 1 V
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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