NDLI: IL analysis for 8-way power combining network in 77–110 GHz 40 nm-complementary metal–oxide

Content Provider	IET Digital Library
Author	Huang, Ching Ying Wu, Pin Hsuan Wu, Kun Long Hu, Robert Chang, Chi Yang
Abstract	In this study, the authors will investigate the insertion loss (IL) of the broadband 8-way power combiner used in their millimetre-wave power amplifier (PA) design. By treating this combiner as impedance transformer under resistor-capacitor (RC)-loading condition, both the characteristic impedance and electrical length of the constituting metal lines can be obtained, where the much shorter line length suggests wider bandwidth and lower IL. However, proper loss analysis must take into account the multi-reflection of voltage wave along these mismatched transmission lines, i.e. the use of the power attenuation expression e − 2 α L is just not accurate enough. With their derived equations, it shows that the IL of their proposed 8-way combiner can be as low as 0.92 dB at 94 GHz, which is much smaller than the 1.5 dB for the conventional quarter-wavelength combiner. Mathematics for the IL of the drain-bias shunt stub and the output DC-blocking capacitor has also been derived. As a demonstration, a 77–110 GHz 40 nm-complementary metal–oxide–semiconductor PA made of cascode transistors is then designed that has more than 18 dB gain, and its OP1 dB is around 13 dBm across the whole frequency range.
Starting Page	1181
Ending Page	1186
Page Count	6
ISSN	1751858X
Volume Number	13
e-ISSN	17518598
Issue Number	Issue 8, Nov (2019)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/13/8
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2019.0074
Journal	IET Circuits, Devices & Systems
Publisher Date	2019-08-07
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Active Filter Active Network Amplifiers Broadband 8-way Power Combiner Cascode Transistors Characteristic Impedance CMOS Integrated Circuit Complementary Metal–oxide–semiconductor PA Design DC-blocking Capacitor Drain-bias Shunt Stub Electrical Length Field Effect MIMIC Frequency 77.0 GHz to 110.0 GHz Impedance Converter Impedance Transformer Insertion Loss Loss Analysis Metal Line Microwave IC Millimetre Wave Power Amplifiers Millimetre-wave Power Amplifier Mismatched Transmission Line Power Attenuation Expression Power Combiners Quarter-wavelength Combiner RC-loading Condition Shorter Line Length Size 40 Nm Voltage Wave Multireflection
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

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