NDLI: Temperature–humidity–bias testing on insulated-gate bipolartransistor modules – failure modes and acceleration due to high voltage

Content Provider	IET Digital Library
Author	Zorn, Christian Kaminski, Nando
Abstract	The temperature–humidity–bias (THB) test is the standard for accelerated stress testing with respect to corrosion and other humidity driven degradation mechanisms. Usually, 1000 h tests at 85°C and 85% relative humidity are used to predict up to 25 years of operation. The bias is usually limited to 80 V in order to fulfil the respective standards. Nevertheless, THB tests on 1700 V insulated-gate bipolar transistor (IGBT)-modules have shown that higher bias is a more severe test condition. The failure analysis confirmed Cu- and Ag-dendrites and corrosion of the aluminium (Al)-chip-metallisation as the relevant failure mechanisms. To determine the acceleration factor due to voltage, 1200 V IGBT modules were tested in THB at 780 V (65% of V CES) and 1080 V (90% of V CES). A characteristic degradation consisting of three phases has been identified. The second phase seems to be determined by Al corrosion and an acceleration factor of about two has been estimated from 780 to 1080 V. Within the third phase, the devices stabilised probably due to localised self-heating. Thus, this degradation mechanism is kind of self-limiting, but the higher leakage also increases the risk of thermal runaway especially when biased close to the rated collector–emitter voltage.
Starting Page	2329
Ending Page	2335
Page Count	7
ISSN	17554535
Volume Number	8
e-ISSN	17554543
Issue Number	Issue 12, Dec (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/8/12
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2015.0031
Journal	IET Power Electronics
Publisher Date	2015-12-01
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Acceleration Acceleration Factor Determination Aluminium-chip-metallisation Corrosion Bipolar Transistor Catastrophic Breakdown Collector-emitter Voltage Control of Electric Power System Copper Dendrites Design And Testing Equivalent Circuit Failure Analysis Failure Mode Humidity Control Humidity Driven Degradation Mechanisms IGBT Module Insulated Gate Bipolar Transistors Insulated Gate Field Effect Transistors Insulated-gate Bipolartransistor Module Leakage Also Limited Self-heating Metallisation And Interconnection Technology Nonelectric Variables Control Power Bipolar Transistors Power Semiconductor Device Reliability Semiconductor Device Metallisation Semiconductor Device Modelling Semiconductor Device Testing Silver Dendrites Stress Testing Temperature 85 DegC Temperature-humidity-bias Testing THB Testing Thermal Runaway Risk Voltage 1200 V Voltage 1700 V Voltage 780 V to 1080 V
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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