NDLI: Base drive energy recovery for a silicon bipolar junction transistors

Content Provider	IET Digital Library
Author	Zhu, Hui Sweet, Mark Narayanan, E. M. Sankara
Abstract	To enable fast switching of a silicon carbide bipolar junction transistor a low impedance base current path is required, traditionally implemented by a RC speed up circuit in parallel to the base resistance. For fast switching speeds the capacitance of this circuit has to be large, dissipating significant power during high frequency switching. This study demonstrates, for the first time, the implementation of an energy recovery (ER) circuit into the base drive; transferring stored energy within the pulse capacitor of the RC circuit back to the power supply. Measured performance of a 1.7 kW boost converter demonstrates an 15.1% reduction in base power losses of the proposed driver when compared with a conventional benchmark operated at a switching frequency of 143 kHz.
Starting Page	2429
Ending Page	2434
Page Count	6
ISSN	17554535
Volume Number	8
e-ISSN	17554543
Issue Number	Issue 12, Dec (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/8/12
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2014.0818
Journal	IET Power Electronics
Publisher Date	2015-12-01
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Base Drive Energy Recovery Base Power Loss Base Resistance Bipolar Transistor Boost Converter Capacitor Energy Recovery Circuit ER Circuit Frequency 143 KHz High Frequency Switching Low Impedance Base Current Path Power 1.7 KW Power Converter Power Electronics Power Semiconductor Device Power Supplies to Apparatus Power Supply Pulse Capacitor RC Circuit RC Speed Up Circuit SiC Silicon Carbide Bipolar Junction Transistors Silicon Compound Supervisory Circuit Switching Circuit Switching Converter Switching Speed Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Parallel-Operation of Discrete SiC BJTs in a 6-kW/250-kHz DC/DC Boost Converter

Development of a boost converter for PV systems based on SiC BJTs

SiC and Si transistors comparison in boost converter

Gate-drive circuit with efficient energy recovery based on DC/DC converter

Silicon Carbide (SiC) D-MOS for grid-feeding solar-inverters

Efficient base driver circuit for silicon carbide bipolar junction transistors

Experimental comparison of dc-dc boost converters with SiC JFETs and SiC bipolar transistors

Practical implementation of a silicon carbide-based 300 kHz, 1.2 kW hard-switching boost-converter and comparative thermal performance evaluation

HF gate drive circuit for a normally-on SiC JFET with inherent safety

Base drive energy recovery for a silicon bipolar junction transistors

Similar Documents

Parallel-Operation of Discrete SiC BJTs in a 6-kW/250-kHz DC/DC Boost Converter

Development of a boost converter for PV systems based on SiC BJTs

SiC and Si transistors comparison in boost converter

Gate-drive circuit with efficient energy recovery based on DC/DC converter

Silicon Carbide (SiC) D-MOS for grid-feeding solar-inverters

Efficient base driver circuit for silicon carbide bipolar junction transistors

Experimental comparison of dc-dc boost converters with SiC JFETs and SiC bipolar transistors

Practical implementation of a silicon carbide-based 300 kHz, 1.2 kW hard-switching boost-converter and comparative thermal performance evaluation

HF gate drive circuit for a normally-on SiC JFET with inherent safety

Base drive energy recovery for a silicon bipolar junction transistors