NDLI: Al modification as indicator of current filaments in IGBTs under repetitive SC operation

Content Provider	IET Digital Library
Author	Mysore, Madhu Lakshman Bhojani, Riteshkumar Kowalsky, Jens Lutz, Josef Baburske, Roman Schulze, Hans Joachim Niedernostheide, Franz Josef
Abstract	This work investigates modification on the top-side aluminium (Al) metallisation of 1.2 kV insulated-gate bipolar transistors (IGBTs) under repetitive short-circuit (SC) type-I measurements for two different parasitic inductances of 45 and 380 nH. The presence of current–density filaments starting at the collector side during SC leads to local temperature increase of the emitter metallisation and thus to modification of the top Al surface in the pattern of the current filaments. Here, two techniques thermo-reflectance microscopy, which can detect the surface temperature during repetitive short circuits directly and Al modifications after repetitive SC with analysis under optical microscope after the test have been considered. At 45 nH, with different DC-link voltages from 300 to 600 V, the Al modification pattern is non-uniform and it becomes uniform for V DC>600 V. However, for 380 nH parasitic inductance and for DC-link voltages 300 and 400 V, the Al reconstruction shows a non-uniform pattern and becomes uniform for V DC≥500 V. The SC simulations were performed by using a simplified front-side IGBT structure using variable DC-link voltages and inductances to reproduce the filament behaviour.
Starting Page	3893
Ending Page	3902
Page Count	10
ISSN	17554535
Volume Number	12
e-ISSN	17554543
Issue Number	Issue 15, Dec (2019)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/12/15
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2019.0125
Journal	IET Power Electronics
Publisher Date	2019-06-06
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Al Modification Pattern Aluminium Bipolar Transistor Current–density Filaments Design And Testing Emitter Metallisation Equivalent Circuit IGBT Structure Insulated Gate Bipolar Transistors Insulated Gate Field Effect Transistors Insulated-gate Bipolar Transistors Metallisation Metallisation And Interconnection Technology Optical Microscopy Parasitic Inductance Parasitic Inductances Power Semiconductor Device Repetitive Short Circuit Semiconductor Device Modelling Semiconductor Device Testing Short-circuit Type-I Measurement Thermo-reflectance Microscopy Thermoreflectance Top-side Aluminium Metallisation Voltage 1.2 KV Voltage 300.0 V to 600.0 V
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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