NDLI: Electrical method to measure the transient thermal impedance of insulated gate bipolar transistor module

Content Provider	IET Digital Library
Author	Wang, Mei Yu Lu, Guo Quan Mei, Yun Hui Li, Xin Wang, Lei Chen, Gang
Abstract	The thermal characterisation of insulated gate bipolar transistor (IGBT) module is very important, since the production consistency and reliability are affected when IGBT is exploited in high temperature. To investigate the transient thermal behaviour of IGBT, a transient thermal impedance (Z th) measurement system was built using the electrical method with gate-emitter voltage as temperature-sensitive parameter. Factors affecting the Z th measurement, such as environment temperature, heating power, duty cycle and heating time, were discussed in detail. The Z th of each component within IGBT module was measured by selecting right heating time before thermal equilibrium. It is found that the Z th measurement has high accuracy and repeatability, which is helpful to understand how thermal performance of IGBT module varies with architecture and material properties for power electronic packaging.
Starting Page	1009
Ending Page	1016
Page Count	8
ISSN	17554535
Volume Number	8
e-ISSN	17554543
Issue Number	Issue 6, Jun (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/8/6
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2014.0120
Journal	IET Power Electronics
Publisher Date	2015-02-23
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Architecture Property Bipolar Transistor Duty Cycle Electrical Method Environment Temperature Gate-emitter Voltage Heating Power Heating Time IGBT Module Instrumentation And Measurement System Insulated Gate Bipolar Transistor Module Insulated Gate Bipolar Transistors Insulated Gate Field Effect Transistors Material Property Measurement System Power Electronic Packaging Product Packaging Production Consistency Production Reliability Reliability Semiconductor Device Packaging Semiconductor Device Reliability Temperature-sensitive Parameter Thermal Equilibrium Transient Thermal Behaviour Transient Thermal Impedance Measurement System
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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