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| Content Provider | IET Digital Library |
|---|---|
| Author | Wang, Shuaimin Liu, Peng Zhang, Jinwen |
| Abstract | The pMOS-RADFET (radiation field-effect transistor) as a microdosimeter has been widely applied in spacecraft, medicine and personal dosimetry. Thick gate-oxide and zero threshold voltage (V th) are two critical factors to achieve a high performance pMOS-RADFET. In this reported work, threshold voltage adjustment techniques for a thick gate oxide RADFET by B + implantation are systematically simulated by Silvaco technology computer-aided design, including implanting energy, implanting dose and annealing conditions. Impurity distributions in gate oxide and silicon substrate are analysed. The results show that the thicker the gate oxide is, the higher the implanting energy and larger dose for tuning V th to 0 V. Both the annealing temperature and the time have to be as low and as short as possible on the premise of sufficient ion activation. |
| Starting Page | 575 |
| Ending Page | 578 |
| Page Count | 4 |
| Volume Number | 8 |
| e-ISSN | 17500443 |
| Issue Number | Issue 10, Oct (2013) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/8/10 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2013.0275 |
| Journal | Micro & Nano Letters |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Annealing Condition Annealing Processes CAD Critical Factors Dosimetry Gate Oxide RADFET Gate-oxide Threshold Voltage High Performance PMOS-RADFET Implanting Dose Implanting Energy Impurity Distribution Insulated Gate Field Effect Transistors Ion Activation Microdosimetry MOSFET PMOS-radiation Field-effect Transistor Silicon Substrate Silvaco Technology Computer-aided Design Thermal Oxide Threshold Voltage Adjustment Technique Zero Threshold Voltage |
| Content Type | Text |
| Resource Type | Article |
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