Please wait, while we are loading the content...
Please wait, while we are loading the content...
Content Provider | IET Digital Library |
---|---|
Author | Cao, Zhen Duan, Baoxing Yuan, Xiaoning Yuan, Song Yang, Yintang |
Abstract | A novel step-oxide super junction-lateral double-diffused metal–oxide–semiconductor field-effect transistor (SOSJ-LDMOS) structure is proposed and optimised which allows the high breakdown voltage (BV) and low-specific on-resistance (R on,sp). The proposed structure overcomes the effect of thick field oxide formed by shallow trench isolation process in conventional buffer layer SJ-LDMOS (N-buffered SJ-LDMOS), effectively enhancing the performance of the SJ-LDMOS. Thanks to the SO layer, a new electric field peak has been introduced in the surface electric field distribution, which makes the lateral surface electric field uniform in the off-state. Moreover, due to the thinner oxide layer, in the on-state the majority of electron current is accumulated near the top surface under the field plate and the thinner oxide layer also provides a wider current flowing path. In the virtue of integrated systems engineering (ISE) simulation, not only has the BV of SOSJ-LDMOS been increased, but also the R on,sp has been reduced simultaneously compared with the N-buffered SJ-LDMOS in the same drift length. In addition, when SOSJ-LDMOS and N-buffered LDMOS are at the same BV, the R on,sp of SOSJ-LDMOS is decreased by 26.3–38.9%, compared with the N-buffer SJ-LDMOS. |
Starting Page | 666 |
Ending Page | 669 |
Page Count | 4 |
Volume Number | 11 |
e-ISSN | 17500443 |
Issue Number | Issue 11, Nov (2016) |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/11/11 |
Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2016.0331 |
Journal | Micro & Nano Letters |
Publisher Date | 2016-11-01 |
Access Restriction | Open |
Rights Holder | © The Institution of Engineering and Technology |
Subject Keyword | Insulated Gate Field Effect Transistors Lateral Double Diffused MOSFET Metal Oxide Semiconductor Field Effect Transistor MOSFET Semiconductor Junction Step Field Oxide Layer Step Oxide MOSFET Superjunction LDMOS Thick Field Oxide Effect |
Content Type | Text |
Resource Type | Article |
National Digital Library of India (NDLI) is a virtual repository of learning resources which is not just a repository with search/browse facilities but provides a host of services for the learner community. It is sponsored and mentored by Ministry of Education, Government of India, through its National Mission on Education through Information and Communication Technology (NMEICT). Filtered and federated searching is employed to facilitate focused searching so that learners can find the right resource with least effort and in minimum time. NDLI provides user group-specific services such as Examination Preparatory for School and College students and job aspirants. Services for Researchers and general learners are also provided. NDLI is designed to hold content of any language and provides interface support for 10 most widely used Indian languages. It is built to provide support for all academic levels including researchers and life-long learners, all disciplines, all popular forms of access devices and differently-abled learners. It is designed to enable people to learn and prepare from best practices from all over the world and to facilitate researchers to perform inter-linked exploration from multiple sources. It is developed, operated and maintained from Indian Institute of Technology Kharagpur.
Learn more about this project from here.
NDLI is a conglomeration of freely available or institutionally contributed or donated or publisher managed contents. Almost all these contents are hosted and accessed from respective sources. The responsibility for authenticity, relevance, completeness, accuracy, reliability and suitability of these contents rests with the respective organization and NDLI has no responsibility or liability for these. Every effort is made to keep the NDLI portal up and running smoothly unless there are some unavoidable technical issues.
Ministry of Education, through its National Mission on Education through Information and Communication Technology (NMEICT), has sponsored and funded the National Digital Library of India (NDLI) project.
Sl. | Authority | Responsibilities | Communication Details |
---|---|---|---|
1 | Ministry of Education (GoI), Department of Higher Education |
Sanctioning Authority | https://www.education.gov.in/ict-initiatives |
2 | Indian Institute of Technology Kharagpur | Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project | https://www.iitkgp.ac.in |
3 | National Digital Library of India Office, Indian Institute of Technology Kharagpur | The administrative and infrastructural headquarters of the project | Dr. B. Sutradhar bsutra@ndl.gov.in |
4 | Project PI / Joint PI | Principal Investigator and Joint Principal Investigators of the project |
Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon |
5 | Website/Portal (Helpdesk) | Queries regarding NDLI and its services | support@ndl.gov.in |
6 | Contents and Copyright Issues | Queries related to content curation and copyright issues | content@ndl.gov.in |
7 | National Digital Library of India Club (NDLI Club) | Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach | clubsupport@ndl.gov.in |
8 | Digital Preservation Centre (DPC) | Assistance with digitizing and archiving copyright-free printed books | dpc@ndl.gov.in |
9 | IDR Setup or Support | Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops | idr@ndl.gov.in |
Loading...
|