NDLI: Low-power amplitude modulator for wireless application using underlap double-gate metal–oxide

Content Provider	IET Digital Library
Author	Mukherjee, Sagar Koley, Kalyan Dutta, Arka Sarkar, Chandan Kumar
Abstract	In this study, a design guideline for a modified low-power wideband on-chip amplitude modulator (AM) based on independently driven double-gate metal–oxide–semiconductor field-effect transistor (IDDGMOS) is proposed. The AM performance is then analysed for three different types of underlap engineered IDDGMOS devices. It is observed that the modulator designed with IDDGMOS presents a higher gain and bandwidth for lower power input signals. For analysing the gain–bandwidth performance of the modulator circuit, a small signal model for the devices is considered. The linearity and noise performance of the modulator circuit for different IDDGMOS structures is analysed by studying the 1 dB compression point and the signal-to-noise ratio. The analysis suggested that the most efficient AM circuit performance is achieved for the symmetric underlap IDDGMOS device. The symmetric underlap IDDGMOS AM circuit yields a gain of 11 dB, a bandwidth of 5.5 GHz and a 47.2% efficiency with a distortion less input signal power range of −60 to −33.5 dB. Moreover, the reduced power loss is about 0.047% of the power loss obtained for the conventional complementary metal–oxide–semiconductor device, whereas the bandwidth of the circuit almost triplicates.
Starting Page	201
Ending Page	208
Page Count	8
ISSN	1751858X
Volume Number	10
e-ISSN	17518598
Issue Number	Issue 3, May (2016)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/10/3
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2015.0212
Journal	IET Circuits, Devices & Systems
Publisher Date	2016-05-01
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Amplitude Modulation Bandwidth 5.5 GHz CMOS Integrated Circuit Complementary Metal–oxide–semiconductor Device Efficiency 47.2 Percent Electrical/electronic Equipment Energy Utilisation Gain 11 DB Gain-bandwidth Performance Independently Driven Double-gate Metal–oxide–semiconductor Field-effect Transistor Insulated Gate Field Effect Transistors Low Power Electronics Low-power Amplitude Modulator Modulator Circuit MOSFET Circuit Symmetric Underlap IDDGMOS AM Circuit Symmetric Underlap IDDGMOS Device Underlap Double Gate Metal Oxide Semiconductor Field Effect Transistor Wideband On-chip Amplitude Modulator Wireless Application
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

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