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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Fujino, M. Suga, T. Soga, I. Kondo, D. Ishizuki, Y. Iwai, T. Mizukoshi, M. |
| Copyright Year | 2010 |
| Description | Author affiliation: FUJITSU Laboratories Ltd. and FUJITSU Ltd., Morinosato Wakamiya 10-1, Atsugi, Kanagawa 243-0197, Japan (Soga, I.; Kondo, D.; Ishizuki, Y.; Iwai, T.; Mizukoshi, M.) || Department of Precision Engineering, The University of Tokyo, Hongo 7-3-1, Bunkyo, 113-8656, Japan (Fujino, M.; Suga, T.) |
| Abstract | In this research, vertically aligned Muti-Walled Carbon Nanotubes (CNTs) and Au-layer were bonded by Surface Activated Bonding method. Vertically aligned CNTs were grown by acetylene-CVD with Fe catalyst and were formed bump shape with 200 µm diameter and around 200 µm height. These CNT bumps and Au layer were cleaned and activated by Argon Fast Atom Beam (Ar-FAB) process and bonded with some load. As a result, MWNTs-Au bonding was succeeded on condition that CNT bumps and Au layer were Ar-FAB processed longer than 300 sec, and bonding pressure was larger than 0.17 MPa, and the average resistance of CNT was 130 kΩ. Furthermore, when the bonding pressure was 0.7 MPa, the average resistance of one was 16 Ω. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 1363610 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424485536 |
| e-ISBN | 9781424485550 |
| e-ISBN | 9781424485543 |
| DOI | 10.1109/ESTC.2010.5642937 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-09-13 |
| Publisher Place | Germany |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Semiconductor device measurement Gold Area measurement Pumps Heating Substrates |
| Content Type | Text |
| Resource Type | Article |
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