NDLI: Junction Temperature Elevation as a Result of Thermal Cross Coupling in a Multi-Device Power Electronic Module

Content Provider	IEEE Xplore Digital Library
Author	Whitehead, M.J. Johnson, C.M.
Copyright Year	2006
Description	Author affiliation: Dept. of Electron. & Electr. Eng., Sheffield Univ. (Whitehead, M.J.; Johnson, C.M.)
Abstract	Thermal cross coupling effects between various semiconductor elements of a 350A IGBT and cooler are determined from transient thermal impedance measurements from junction to ambient. The dynamic thermal behaviour of the module and cooler is represented in the Laplace transform domain by a matrix-vector formulation in which the temperature elevation of each element is related to the power dissipated in all the active elements. A PSpice representation of the model is developed, in which each term of the trans-impedance matrix is represented by a cascaded R-C network. Results from the simulation of a PWM inverter show that the load power frequency influences the thermal cross-coupling effects within the module. It is clear that thermal cross-coupling is a significant additional source of junction temperature elevation and under some load power conditions can increase the depth of thermal cycles
Sponsorship	IEEE CPMT
Starting Page	1218
Ending Page	1223
File Size	6751669
Page Count	6
File Format	PDF
ISBN	1424405521
DOI	10.1109/ESTC.2006.280165
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-09-05
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Temperature Impedance measurement Tiles Thermal engineering Bridge circuits Multichip modules Predictive models Power electronics Thermal loading
Content Type	Text
Resource Type	Article

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