NDLI: A Study on the 0-Level Package Design of a High Accuracy Silicon MEMS Resonator

Content Provider	IEEE Xplore Digital Library
Author	Gonzalez, M. Jourdain, A. De Vlaminck, I. Vandevelde, B. Tilmans, H.A.C.
Copyright Year	2006
Description	Author affiliation: IMEC, Leuven (Gonzalez, M.; Jourdain, A.; De Vlaminck, I.; Vandevelde, B.; Tilmans, H.A.C.)
Abstract	Finite element analysis (FEA) is employed in this work to calculate the induced stresses in a double clamped silicon resonator and estimate the shift in frequency due to induced stresses during processing. From the modeling results, it was found that the induced stresses in the resonator are in the order of 1 to 6 MPa. A parametric analysis done on the FEM suggested that the sensitive factors affecting the resonance frequency of the resonator are: (a) the distance between the anchor of the beam resonator and the sealing ring, (b) the width of the sealing ring and (c) the materials used in the sealing ring. The analysis indicates that a narrow sealing ring will reduce the stresses in the resonator, however a compromise between hermeticity and low induced stress has to be kept. Another possibility to reduce the shift in resonance frequency is to place the sealing ring at an optimal distance from the anchor points of the resonator, counteracting the local deformation of the sealing ring and the global warpage of the package. A stress-decoupling gap is also proposed to isolate the resonator from the deformations of the sealing ring
Sponsorship	IEEE CPMT
Starting Page	1082
Ending Page	1087
File Size	6759506
Page Count	6
File Format	PDF
ISBN	1424405521
DOI	10.1109/ESTC.2006.280144
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-09-05
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Micromechanical devices Thermomechanical processes Resonant frequency Electronic packaging thermal management Silicon Resonance Wafer scale integration Residual stresses Protection Thermal stresses
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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