NDLI: Failure Mechanisms of Direct Copper Bonding Substrates (DCB)

Content Provider	IEEE Xplore Digital Library
Author	Gunther, M. Wolter, K.J. Rittner, M. Niichter, W.
Copyright Year	2006
Description	Author affiliation: Robert Bosch GmbH, Stuttgart (Gunther, M.)
Abstract	The instant of macroscopic crack starting and the location of first cracked area are described for direct copper bonding substrates. The first crack appearance is followed by subcritical crack growth in the ceramics. The direction of crack growth changes from mode II to mode I, because of residual stress in the assembly. Crack appears at symmetrical layouts preferential to one side depending on the manufacturing history of the DCB substrate. This effect can have two reasons. First, the loading caused by copper varies on both sides because of the serial bonding process. Second, the strength of the ceramic on both sides is different because of the growth of different interfaces between the copper and the alumina. By characterizing alumina, the same strength on both sides by a four point bending test can be found. Indention fracture experiments do not show a significant different behaviour in different breaking directions. Furthermore, the location of crack occurrence can be changed by the layout of the conductive pad and the aging of the assembly
Sponsorship	IEEE CPMT
Starting Page	714
Ending Page	718
File Size	6115238
Page Count	5
File Format	PDF
ISBN	1424405521
DOI	10.1109/ESTC.2006.280090
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-09-05
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Bonding processes Failure analysis Aging Ceramics Residual stresses Manufacturing Copper History Assembly Testing
Content Type	Text
Resource Type	Article

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