NDLI: Analysis of Gate-Driver Circuit requirements for H-Bridge Based Converters with GaN HFETs

Content Provider	IEEE Xplore Digital Library
Author	Sarrafin-Ardebili, F. Allard, B. Crebier, J.-C.
Copyright Year	2015
Description	Author affiliation: Grenoble Electr. Eng., Grenoble Alpes Univ., Grenoble, France (Sarrafin-Ardebili, F.; Crebier, J.-C.) \|\| INSA DE LYON, Univ. of Lyon, Lyon, France (Allard, B.)
Abstract	The enhanced Gallium-Nitride (GaN) power transistors have recently emerged as one of the promising next generations for power switches for high frequency and high power density switch mode power converters. This paper analyses and describes the requirements of a high frequency Quad Gate Driver (4 drivers) which will be embedded in an isolated low voltage H-Bridge based converter (up to 100V). This work is on the one hand based on simulation results of the Quad Gate Driver and on the other hand the experimental results for a 150W, 30V/5A DAB-GaN prototype operating at 1 MHz switching frequency with off-the-shelf gate drivers.
Starting Page	1
Ending Page	10
File Size	986078
Page Count	10
File Format	PDF
e-ISBN	9789075815221
DOI	10.1109/EPE.2015.7309462
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-09-08
Publisher Place	Switzerland
Access Restriction	Subscribed
Rights Holder	EPE Association and IEEE
Subject Keyword	High Speed Gate Driver Switching frequency Dual Active Bridge Bridge circuits Switches GaN HFET Logic gates Frequency conversion Slew Rate Power DC-DC Converter Transistors Gallium nitride
Content Type	Text
Resource Type	Article

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Analysis of Gate-Driver Circuit requirements for H-Bridge Based Converters with GaN HFETs