NDLI: Implementation of the NIST IGBT model based on ordinary differential equations

Content Provider	IEEE Xplore Digital Library
Author	Felderer, N. Min Luo
Copyright Year	2015
Description	Author affiliation: Plexim GmbH, Zürich, Switzerland (Felderer, N.; Min Luo)
Abstract	Modeling the electrical behavior of insulated gate bipolar transistors (IGBTs) with ideal and instantaneous transitions allows a fast and efficient simulation of power electronic circuits at the system level. Some phenomena at the very moment of the switching transition are neglected however by this modeling method, such as the turn-on and turn-off delay time of the IGBTs or gate drive circuit requirements. The more detailed $NIST^{1}$ IGBT model accounting for these effects requires an algebraic differential equation (DAE) solver, which solves the system equations in a sophisticated iterative manner. On the other hand, system level simulators such as PLECS use a description of physical models based on ordinary differential equations (ODEs) for the sake of speed and stability of the simulation. The following work presents a description of the NIST IGBT model using ODEs and an implementation in PLECS. It is then compared by means of transient simulation to existing implementations in other circuit simulators.
Starting Page	1
Ending Page	5
File Size	285256
Page Count	5
File Format	PDF
e-ISBN	9789075815221
DOI	10.1109/EPE.2015.7309207
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-09-08
Publisher Place	Switzerland
Access Restriction	Subscribed
Rights Holder	EPE Association and IEEE
Subject Keyword	Insulated gate bipolar transistors Semiconductor device modeling MOSFET Logic gates Mathematical model Integrated circuit modeling Anodes
Content Type	Text
Resource Type	Article

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