NDLI: Current-fed GaN front-end converter for ISOP-IPOS converter-based high power density dc distribution system

Content Provider	IEEE Xplore Digital Library
Author	Hayashi, Y. Iso, H. Hara, D. Matsumoto, A.
Copyright Year	2015
Description	Author affiliation: NTT Facilities, Tokyo, Japan (Matsumoto, A.) \|\| Osaka Univ., Suita, Japan (Hayashi, Y.; Iso, H.; Hara, D.)
Abstract	A current-fed ac-dc converter using Gallium Nitride (GaN) power devices has been proposed to realize high power density ISOP (Input Series and Output Parallel)-IPOS (Input Parallel and Output Series) converter-based dc distribution system. The current-fed converter becomes the strong candidate in the ISOP-IPOS converter-based dc distribution system because this system expands the possibility of the ac-dc converter design without taking the converter I/O voltages and its output power into account. An 1 kW prototype with the efficiency of 95.5% has been developed by using GaN-HEMTs to show the feasibility. Design consideration for the GaN converter has been also conducted quantitatively taking the low on-resistance, the high-speed switching behavior and its own device structure into account. The ISOP-IPOS converter-based dc distribution system takes full advantage of the current-fed converter and the converter using GaN devices contributes to realizing higher power density dc distribution system.
Starting Page	1
Ending Page	10
File Size	937070
Page Count	10
File Format	PDF
e-ISBN	9789075815221
DOI	10.1109/EPE.2015.7309269
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-09-08
Publisher Place	Switzerland
Access Restriction	Subscribed
Rights Holder	EPE Association and IEEE
Subject Keyword	Design Power system measurements DC power supply Density measurement Gallium Nitride (GaN) Prototypes Switches High power density systems Topology Gallium nitride Next generation networking
Content Type	Text
Resource Type	Article

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