NDLI: A New Bandgap Reference for High-Resolution Data Converters

Content Provider	IEEE Xplore Digital Library
Author	Chenchang Zhan Wei Wang Xiaofang Zhou Dian Zhou
Copyright Year	2007
Description	Author affiliation: Fudan Univ., Shanghai (Chenchang Zhan; Wei Wang; Xiaofang Zhou; Dian Zhou)
Abstract	In this paper, a CMOS bandgap reference (BGR) for high-resolution data-converters is proposed and analyzed. The proposed BGR circuit is derived and modified from a recently developed low-voltage BGR. It combines two different branches of conventional BGR into one PMOS transistor, avoiding the matching requirement of the current mirror. The low temperature-susceptible current is used to generate high and low references for data-converters. This modified architecture is verified by a 0.35-um CMOS BGR circuit. In the demo design, the 2.7 V and 0.6 V voltage and 12 uA current references for a sigma-delta analog-to-digital modulator all obtain a temperature coefficient (TC) of about 20 ppm/K. With a tiny adjustment, the proposed BGR also has the potential to work at low supply-voltage.
Starting Page	488
Ending Page	491
File Size	205090
Page Count	4
File Format	PDF
ISBN	1424410916
DOI	10.1109/ICITECHNOLOGY.2007.4290525
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-03-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Operational amplifiers Temperature Photonic band gap Data-Converter SoC Bandgap Reference Delta-sigma modulation Dynamic voltage scaling MOSFETs Application specific integrated circuits Sigma-Delta CMOS technology Circuit noise Mirrors
Content Type	Text
Resource Type	Article

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