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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Vermaas, L.L.G. De Mori, C.R.T. Moreno, R.L. Pereira, A.M. Charry R., E. |
| Copyright Year | 1998 |
| Description | Author affiliation: Grupo de Microeletronica, Escola Fed. de Engenharia de Itajuba, Itajuba, Brazil (Vermaas, L.L.G.) |
| Abstract | This work describes some issues and criteria for the design of a bandgap voltage reference. It examines a particular voltage reference architecture, characteristics of the operational amplifier, parasitic bipolar transistor biasing currents and the start-up circuit. Test circuits have been fabricated in the AMS 0.8 /spl mu/m n-well CMOS process. Experimental results yield an output voltage which is constant within 0.72% over the temperature range of -40/spl deg/C to 95/spl deg/C and the power supply range of 5 V/spl plusmn/10%. |
| Starting Page | 303 |
| Ending Page | 306 |
| File Size | 380334 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780350081 |
| DOI | 10.1109/ICECS.1998.814886 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1998-09-07 |
| Publisher Place | Portugal |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Photonic band gap Voltage CMOS process Operational amplifiers Power supplies Temperature Doping Bipolar transistors Circuit testing MOSFETs |
| Content Type | Text |
| Resource Type | Article |
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