NDLI: Two dimensional model for lateral photodiode

Content Provider	IEEE Xplore Digital Library
Author	Alexandra, A. Dadouche, F. Garda, P.
Copyright Year	2006
Description	Author affiliation: Lab. des Instruments et Syst. d'Ile de France, Univ. Pierre et Marie Curie, Paris (Alexandra, A.; Dadouche, F.; Garda, P.)
Abstract	The design of mixed signal systems on chip is nowadays challenging, especially those including active pixel sensors (APS) for imaging. To simulate such systems, it is necessary to use optoelectronic models of the behavior of the photodetectors. The most used photodetectors in CMOS technologies are vertical photodiodes, but for specific applications, lateral photodiodes are needed. Vertical photodiodes can be described by one dimensional models but in lateral photodiode, bidimensional effects appear. Therefore a physical two dimensional model of lateral photodiode has been developed. An electrical model was defined and physical parameters which take place in this model, were presented. The results were compared to an approximated one dimensional model and show that a two dimensional model is needed to simulate the light response of lateral photodiodes
Starting Page	294
Ending Page	298
File Size	234478
Page Count	5
File Format	PDF
ISBN	0780397266
DOI	10.1109/DTIS.2006.1708671
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-09-05
Publisher Place	Tunisia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor device modeling Image sensors CMOS image sensors CMOS technology Photodetectors Sensor systems Photodiodes System-on-a-chip Signal design Pixel
Content Type	Text
Resource Type	Article

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