NDLI: Comparison of various substrate technologies under steady state and transient conditions

Content Provider	IEEE Xplore Digital Library
Author	Larson, S.E. Slaby, J.
Copyright Year	2004
Description	Author affiliation: Integrated Electron. Syst. Sector, Motorola Inc., Deer Park, IL, USA (Larson, S.E.; Slaby, J.)
Abstract	Several substrate technologies for use in automotive electronics applications have been studied for their relative thermal performance. These technologies include aluminum oxide (A1/sub 2/O/sub 3/) insulated metal substrate (collectively known as AIMS); aluminum nitride (AlN) direct-bond copper (DBCu); aluminum oxide direct-bond copper; insulated metal substrate; FR4 substrate; field effect transistor (FET) on copper spreader on FR4. All substrate configurations were attached to die-cast aluminum (Al) rigidizers. Only the AIMS substrate was studied as a system utilizing both die-cast and stamped aluminum rigidizers. The FR4 substrates included thermal vias. The technologies were compared under both steady state and transient power conditions. Additionally, conduction-only (localized) and conduction/convection (system-level) models were studied. Localized results indicate all substrate configurations perform better than FR4, provided the in-plane dimensions of the substrate under study remain the same. System-level results indicate all substrate configurations perform better than FR4, provided the FET spacing is maintained approximately the same. The slight influence of thermal property variation is demonstrated. Performance vs. normalized cost is also presented.
Sponsorship	Components, Packaging and Manufacturing Technol. Soc. of the Inst. of Elec. and Electron. Eng
Starting Page	648
Ending Page	654
File Size	386011
Page Count	7
File Format	PDF
ISBN	0780383575
DOI	10.1109/ITHERM.2004.1318347
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-06-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Steady-state FETs Thermal resistance Temperature Artificial intelligence Copper Costs Aluminum oxide Insulation Computational fluid dynamics
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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