NDLI: A 80GHz voltage controlled oscillator utilizing a negative varactor in 90nm CMOS technology

Content Provider	IEEE Xplore Digital Library
Author	Chaivipas, W. Okada, K. Matsuzawa, A.
Copyright Year	2008
Description	Author affiliation: Dept. Phys. Electron., Tokyo Inst. of Technol., Tokyo (Chaivipas, W.; Okada, K.; Matsuzawa, A.)
Abstract	A 80 GHz voltage controlled oscillator is presented. It is shown that impedance transformation enables the transformation of a varactor capacitance into negative varactor partially canceling the capacitance of the differential pair. This enables the transmission line resonator to be longer and have a higher impedance. Design criterion for achieving negative varactor is also presented, and design issues of millimeter wave voltage controlled oscillators are discussed. The voltage controlled oscillator is fabricated in 90 nm CMOS technology and achieves a phase noise of -109 dBc/Hz at 10 MHz offset with 13 mW power consumption from a 1.2 V power supply.
Starting Page	133
Ending Page	136
File Size	245381
Page Count	4
File Format	PDF
ISBN	9781424426041
DOI	10.1109/ASSCC.2008.4708747
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-11-03
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS technology Voltage-controlled oscillators Varactors Impedance Capacitance Millimeter wave technology Power transmission lines Phase noise Energy consumption Power supplies
Content Type	Text
Resource Type	Article

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A 80GHz voltage controlled oscillator utilizing a negative varactor in 90nm CMOS technology