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| Content Provider | IEEE Xplore Digital Library | 
|---|---|
| Author | Hoeju Chung Youngchan Jang Youngdon Choi Hwanwook Park Jaekwan Kim Soouk Lim Jung Sunwoo Moonsook Park Hyungwsuk Kim Sang-Yun Kim Hyun-Kyung Kim Su-Jin Chung Eun-Mi Lee Youngju Kim Yun-Sang Lee Woo-Seop Kim Jung-Bae Lee Changhyun Kim | 
| Copyright Year | 2008 | 
| Description | Author affiliation: ATD Team, Samsung Electron. Co., Ltd., Hwasung (Hoeju Chung; Youngchan Jang; Youngdon Choi; Hwanwook Park; Jaekwan Kim; Soouk Lim; Jung Sunwoo; Moonsook Park; Hyungwsuk Kim; Sang-Yun Kim; Hyun-Kyung Kim; Su-Jin Chung; Eun-Mi Lee; Youngju Kim; Yun-Sang Lee; Woo-Seop Kim; Jung-Bae Lee; Changhyun Kim) | 
| Abstract | A 5.8 Gb/s/pin DRAM with unidirectional differential I/Os and 1 Gbit memory core was designed and 23.2 GB/s memory module was assembled. Tx BER measurement on an electrical test board similar to real memory sub-systempsilas environment was performed and the results show that no additional coding for the differential I/O protection, like CRC, seems to be required up to 5.8 Gb/s/pin operation. Also, an efficient timing usage method using matched path for a possible implementation of CRC computation in ODIC architecture was proposed. | 
| Starting Page | 29 | 
| Ending Page | 32 | 
| File Size | 638958 | 
| Page Count | 4 | 
| File Format | |
| ISBN | 9781424426041 | 
| DOI | 10.1109/ASSCC.2008.4708721 | 
| Language | English | 
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) | 
| Publisher Date | 2008-11-03 | 
| Publisher Place | Japan | 
| Access Restriction | Subscribed | 
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) | 
| Subject Keyword | Bit error rate Random access memory Cyclic redundancy check Assembly Electric variables measurement Testing Performance evaluation Protection Timing Computer architecture | 
| Content Type | Text | 
| Resource Type | Article | 
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